Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition

Materials Research Society Symposium - Proceedings

Volumn 477, Issue , 1997, Pages 345-349

  Cho, M H ^a   Whangbo, S W ^a   Whang, C N ^a   Choi, S C ^a   Kang, S B ^a   Lee, S I ^a   Lee, M Y ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; METAL INSULATOR BOUNDARIES; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; YTTRIUM COMPOUNDS;

GLANCING X RAY DIFFRACTION (GXRD) ANALYSIS; IONIZED CLUSTER BEAM (ICB) DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0031347473     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-474-345     Document Type: Conference Paper

References (15)