Compositionally dependent band offsets in AlN/AlxGa1-xN heterojunctions measured by using x-ray photoelectron spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 775-780

  Beach, R A ^a   Piquette, E C ^a   Grant, R W ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

RADIO FREQUENCY PLASMA ASSISTED MOLECULAR BEAM EPITAXY; VALANCE BAND OFFSETS;

HETEROJUNCTIONS;

EID: 0031346899     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-775     Document Type: Conference Paper

References (7)