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Volumn , Issue , 1997, Pages 185-189
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Novel approach to monitoring of plasma processing equipment and plasma damage without test structures
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
ELECTRIC CHARGE;
ELECTRODES;
INTEGRATED CIRCUIT MANUFACTURE;
ION IMPLANTATION;
MONITORING;
OXIDES;
PLASMA DEVICES;
SILICON WAFERS;
CONTACT POTENTIAL DIFFERENCE MEASUREMENT;
PLASMA DAMAGE;
PLASMA DAMAGE MONITOR;
PLASMA PROCESSING EQUIPMENT;
PLASMA ETCHING;
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EID: 0031344990
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (9)
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References (8)
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