Novel approach to monitoring of plasma processing equipment and plasma damage without test structures

IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop

Volumn , Issue , 1997, Pages 185-189

  Hoff, A ^a   Nauka, K ^a   Esry, T ^a   Persson, E ^a   Lagowski, J ^a   Jastrzebski, L ^a   Edelman, P ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CHARGE; ELECTRODES; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; MONITORING; OXIDES; PLASMA DEVICES; SILICON WAFERS;

CONTACT POTENTIAL DIFFERENCE MEASUREMENT; PLASMA DAMAGE; PLASMA DAMAGE MONITOR; PLASMA PROCESSING EQUIPMENT;

PLASMA ETCHING;

EID: 0031344990     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)