Characterization of the oxidation rate of densified SiN thin films by Auger and infrared absorption spectroscopies

Thin Solid Films

Volumn 311, Issue 1-2, 1997, Pages 38-43

  Carrillo López, Jesús ^a   Morales Acevedo, Arturo ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Oxidation; Silicon nitride thin films

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; FILM GROWTH; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; OXIDATION; PLASMA APPLICATIONS; SILICON NITRIDE; STOICHIOMETRY; TEMPERATURE;

INFRARED ABSORPTION SPECTROSCOPY; OXIDATION RATE;

THIN FILMS;

EID: 0031344805     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00442-2     Document Type: Article

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