Optical properties of manganese-doped ZnSe/ZnS quantum dots grown by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 12 B, 1997, Pages

  Wu, Yihong ^a   Arai, Kenta ^a   Kuroda, Noritaka ^a   Yao, Takafumi ^a   Yamamoto, Aishi ^a   Shen, Meng yan ^a   Goto, Takenari ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY TRANSFER; EPITAXIAL GROWTH; MANGANESE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

STEADY STATE PHOTOLUMINESCENCE MEASUREMENT; TIME RESOLVED PHOTOLUMINESCENCE MEASUREMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031344752     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1648     Document Type: Article

References (9)