Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers

Journal of Materials Science

Volumn 32, Issue 24, 1997, Pages 6665-6670

  Yang, Y ^a   Chen, H ^b   Zhou, Y Q ^a   Li, F H ^a  

^a INSTITUTE OF PHYSICS   (China)

^b Beijing Lab of Electron Microscopy   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON DIFFRACTION; MICROSCOPIC EXAMINATION; MICROSTRUCTURE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

SEMICONDUCTOR ANNEALING;

SILICON WAFERS;

EID: 0031344578     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018660621918     Document Type: Article

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