Influence of the trench corner design on edge termination of UMOS power devices

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1929-1936

  Thapar, Naresh ^a   Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE;

TRENCH CORNER DESIGN; VOLTAGE BLOCKING CAPABILITY;

MOS DEVICES;

EID: 0031344104     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00165-2     Document Type: Article

References (10)

1. Baliga, B. J., Power Semiconductor devices, PWS Publishing Co., Boston, 1995, p. 66.
2. Thapar, N. and Baliga, B. J., in Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's, 1996, p. 83-86.
3. Technology Modelling Associates, MEDICI Owners Manual.
4. Matsushita, K., Omura I. and Ogura, T., in Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's, 1995, p. 256-260.
5. Udrea, F. and Amaratunga, G. A. J., in Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's, 1995, p. 190-195.
6. Kitagawa, M., Nakagawa, A., Matsushita, K., Hasegawa, S., Inoue, T., Yahata, A. and Takenaka, H., in Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's, 1995, pp. 486-491.
7. Chang, H. R. and Baliga, B. J., IEEE Trans. Electron Devices, 1989, 36 (9), 1824-1829.
8. Harda, M., Minato, T., Takahashi, H., Nishihara, H., Inoue, K. and Takata, I., Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's, 1992, p. 411-416.
9. Mehorotra, M., Thapar, N. and Baliga, B. J., in 54th Device Res. Conf., 1996.
10. Williams, R. K., Grabowski, W., Darwish, M., Yilmaz, H., Chang, M., Owyang, K., in Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's, 1996. p. 53-56.