20% (AM1.5) efficiency GaAs solar cells on sub-mm grain-size poly-Ge and its transition to low-cost substrates

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1997, Pages 811-814

  Venkatasubramanian, R ^a   O'Quinn, B C ^a   Siivola, E ^a   Keyes, B ^a   Ahrenkiel, R ^a  

^a RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OPTIMIZATION; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THIN FILM DEVICES;

DARK CURRENT REDUCTION MECHANISM;

SOLAR CELLS;

EID: 0031343879     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)