Magnetoresistance effects in granular thin layers formed by high dose iron implantation into silicon

Materials Research Society Symposium - Proceedings

Volumn 475, Issue , 1997, Pages 55-60

  Wong, S P ^a   Cheung, W Y ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GRANULAR MATERIALS; ION IMPLANTATION; IRON; MAGNETIC FIELDS; MAGNETORESISTANCE; MICROSTRUCTURE; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GRANULAR THIN LAYERS; HIGH DOSE IRON IMPLANTATION; ION BEAM SYNTHESIS; MAGNETORESISTANCE EFFECTS; METAL VAPOR VACUUM ARC ION SOURCE;

THIN FILMS;

EID: 0031343528     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-475-55     Document Type: Conference Paper

References (16)