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Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 813-818

Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures

(8) Wasik, D a Dmowski, L b Mikucki, J a Lusakowski, J a Hsu, L c,d Walukiewicz, W d Bi, W G e Tu, C W e

a UNIVERSITY OF WARSAW (Poland)

b INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

c UNIVERSITY OF CALIFORNIA (United States)

d LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

e UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Heterostructure; InGaAs; InP; Pressure

Indexed keywords

CHARGE TRANSFER; CRYSTAL IMPURITIES; ELECTRIC RESISTANCE; ELECTRON SOURCES; HYDROSTATIC PRESSURE; INTERFACES (MATERIALS); PRESSURE EFFECTS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSPORT PROPERTIES;

LOW MOBILITY ELECTRONS; TWO DIMENSIONAL ELECTRON TRANSPORT;

HETEROJUNCTIONS;

EID: 0031343130 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.813 Document Type: Article

Times cited : (4)

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