Free-standing ZnSe/ZnS quantum wires with high luminescence efficiency

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3770-3772

  Rinaldi, R ^a   Turco, C ^a   Lovergine, N ^a   Cingolani, R ^a   Vasanelli, L ^b   DiFabrizio, E ^c   Grella, L ^c   Gentili, M ^c   DeCaro, L ^d   Tapfer, L ^d  

^a INFN SEZIONE DI LECCE   (Italy)

^b UNIVERSITY OF SALENTO   (Italy)

^c CNR   (Italy)

^d Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; EMISSION SPECTROSCOPY; FABRICATION; LUMINESCENCE; QUANTUM THEORY; RELAXATION PROCESSES; SEMICONDUCTING ZINC COMPOUNDS;

STARK EFFECT; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031342759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120501     Document Type: Article

References (13)

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8. The exciton emission in the quantum well and in the quantum wires was found to follow a Gaussian line shape even at low temperature, probably due to the inherent inhomogeneous broadening occurring in the ultrathin ZnSe quantum well from which the wires were obtained. The tail of the localized states was fitted by using a parabolic density of states profiles and a Boltzman population factor. However, it was found that the high energy bands were only weakly influenced by the shape of the low energy tail.
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