Recombination-enhanced Fe atom jump of Fe-acceptor pairs in Si

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 443-448

  Takahashi, Tohru ^a   Suezawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

ESR; Fe; Fe acceptor pair; Recombination enhanced jump; Si

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BAND STRUCTURE; CONCENTRATION (PROCESS); CRYSTAL ATOMIC STRUCTURE; ELECTRON SPIN RESONANCE SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; IRON; QUENCHING; SEMICONDUCTOR DOPING;

RECOMBINATION ENHANCED ATOMIC JUMP;

SEMICONDUCTING SILICON;

EID: 0031341170     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.443     Document Type: Article

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