Transient lattice vibration induced by successive carrier captures at a deep-level defect and the effect on defect reactions

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 659-664

  Shinozuka, Yuzo ^a   Karatsu, Tetsuya ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Deep level; Defect reaction; Lattice relaxation; Multiphonon recombination

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; ENERGY GAP; LATTICE VIBRATIONS; PHONONS;

MULTIPHONON RECOMBINATION; PHONON KICK MECHANISM;

SEMICONDUCTOR MATERIALS;

EID: 0031339955     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.659     Document Type: Article

References (11)

1. Y. Shinozuka: J. Phys. Soc. Jpn. 51 (1982) 2852 ; Jpn. J. Appl. Phys. 32 (1993) 4560 .
2. Y. Shinozuka: J. Phys. Soc. Jpn. 51 (1982) 2852 ; Jpn. J. Appl. Phys. 32 (1993) 4560 .
3. H. Sumi: Phys. Rev. B29 (1985) 4616, J. Phys. C17 (1984) 6071.
4. H. Sumi: Phys. Rev. B29 (1985) 4616, J. Phys. C17 (1984) 6071.
5. O. Ueda, "Reliability and degradation of III-V optical devices" (Artech House Publishers, Boston-London, 1996).
6. D. L. Dexter, C. C. Klick, and G. A. Russel, Phys. Rev. 100 (1956) 603.
7. M. K. Sheinkman, JETP Lett. 38 (1983) 330, and M. K. Sheinkman and L. C. Kimerling, "Defect Control in Semiconductors", ed. K. Sumino (North-Holland, 1990) p. 97.
8. M. K. Sheinkman, JETP Lett. 38 (1983) 330, and M. K. Sheinkman and L. C. Kimerling, "Defect Control in Semiconductors", ed. K. Sumino (North-Holland, 1990) p. 97.
9. J. D. Weeks, J. C. Tully, and L. C. Kimerling, Phys. Rev. B12, 3286 (1975).
10. Y. Shinozuka, Proc. 19th Taniguchi Symposium, "Relaxations of Excited States and Photo-Induced Structural Phase Transitions" (Springer, 1997) ed. by K. Nasu, p. 229.
11. Y. Shinozuka, Proc. MRS 1996 Fall Meeting 442, "Defects in Electronic Materials II", ed. J. Michel, T. Kennedy, K. Wada and K. Thonke, p. 225.