Growth of CuInS2 films by rf ion plating and their characterization

Solar Energy Materials and Solar Cells

Volumn 49, Issue 1-4, 1997, Pages 327-335

  Kondo, Ken Ichi ^a   Nakamura, Susumu ^a   Sano, Hiroyuki ^a   Hirasawa, Hiroshi ^a   Sato, Katsuaki ^b  

^a STANLEY ELECTRIC CO LTD   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Characterization; CuInS2; Growth; Low temperature; rf ion plating

Indexed keywords

CHARACTERIZATION; COMPOSITION; CRYSTAL STRUCTURE; ELECTROPLATING; LOW TEMPERATURE EFFECTS; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

COPPER INDIUM SULFIDE; RADIO FREQUENCY ION PLATING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031339886     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00068-8     Document Type: Article

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