Point defects, diffusion and gettering in silicon

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 13-24

  Goesele, U ^a   Conrad, D ^a   Werner, P ^a   Tong, Q Y ^a   Gafiteanu, R ^a   Tan, T Y ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; POINT DEFECTS; SUBSTRATES;

INTRINSIC POINT DEFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031339812     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (100)