메뉴 건너뛰기




Volumn 16, Issue 24, 1997, Pages 2036-2038

Oxygen dependence of Schottky barriers on niobium-doped strontium titanate single crystal

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; NIOBIUM; OXYGEN; PLATINUM; PRESSURE EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILVER; SINGLE CRYSTALS;

EID: 0031338972     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018504632299     Document Type: Article
Times cited : (6)

References (13)
  • 6
    • 2242454632 scopus 로고
    • Inst. Electrical Engineers of Japan, Tokyo
    • I. OOBA, in "Fundamental Electronic Properties", (Inst. Electrical Engineers of Japan, Tokyo, 1990) p. 25-164.
    • (1990) Fundamental Electronic Properties , pp. 25-164
    • Ooba, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.