Long-wavelength IR interband cascade light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 282-288

  Yang, Rui Q ^a,c   Lin, C H T ^a   Murry, Stefan J ^a   Zhang, Dongxu ^a   Pei, Shin Shem ^a   Dupont, Emmanuel ^b   Liu, Hui C ^b   Buchanan, Margaret ^b  

^a UNIVERSITY OF HOUSTON   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c QET Inc   (United States)

Author keywords

Cascade light emitting diodes; Interband transition; Long wavelength IR; Type II quantum wells

Indexed keywords

CHEMICAL SENSORS; CRYSTAL GROWTH; DIODES; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; GALLIUM ALLOYS; HETEROJUNCTIONS; LASERS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; THICKNESS MEASUREMENT; WELLS; ANTIMONY; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE REGION (AR); CASCADE LIGHT EMITTING DIODES; DEVICE STRUCTURES; INTERBAND CASCADE (IC); INTERBAND TRANSITION; LONG-WAVELENGTH IR; MULTILAYER (ML); QUANTUM WELL STRUCTURES; TYPE-II QUANTUM WELLS; INTERBAND CASCADE DIODES; STARK EFFECT;

SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR LASERS;

EID: 0031338257     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273798     Document Type: Conference Paper

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