Implantation of reactive and unreactive ions in silicon

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 611-616

  Brucato, J R ^a   Baratta, G A ^b   Compagnini, G ^c   Strazzulla, G ^b  

^a INAF OSSERVATORIO ASTRONOMICO DI CAPODIMONTE   (Italy)

^b INAF OSSERVATORIO ASTROFISICO DI CATANIA   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

Implantation; Infrared; Silicon

Indexed keywords

ARGON; CARBON; CHEMICAL BONDS; HELIUM; HYDROGEN; INFRARED SPECTROSCOPY; ION IMPLANTATION; NITROGEN; OXYGEN;

CHARACTERISTIC INFRARED (IR) BANDS; TARGET ATOMS;

SEMICONDUCTING SILICON;

EID: 0031337513     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.611     Document Type: Article

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