Surface morphology of Si1-x-yGexCy epitaxial films deposited by low temperature UHV-CVD

Materials Research Society Symposium - Proceedings

Volumn 440, Issue , 1997, Pages 275-280

  John, S ^a   Quinones, E J ^a   Ferguson, B ^a   Ray, S K ^a   Mullins, C B ^a   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; STRAIN; SURFACE ROUGHNESS; VACUUM APPLICATIONS;

ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV CVD);

SEMICONDUCTING FILMS;

EID: 0031337143     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)