Electrical properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by sol-gel processing

Ferroelectrics

Volumn 200, Issue 1-4, 1997, Pages 185-195

  Paik, Dong Soo ^a   Shin, Hyun Yong ^b   Choi, Hyung Wook ^a   Park, Yong Wook ^a   Yoon, Seok Jin ^c   Park, Chang Yub ^a  

^a Yonsei University   (South Korea)

^b Dept of Electronics Engineering   (South Korea)

^c Department of Ceramics Engineering ^*  (South Korea)

Author keywords

Fatigue; Hysteresis loop; Leakage current; Pb(Zr, Ti) O3 film; Sol gel processing

Indexed keywords

ANNEALING; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; FILM PREPARATION; HYSTERESIS; LEAKAGE CURRENTS; POLARIZATION; SOL-GELS; SUBSTRATES; THIN FILMS;

REMANENT POLARIZATION;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0031337061     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199708008605     Document Type: Article

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