The ultimate scaling limit of semiconductor-based transistors

Superlattices and Microstructures

Volumn 22, Issue 3, 1997, Pages 417-420

  Zhang, W E ^a   Wang, F C ^a   Yang, C H ^a   Yang, M J ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FERMI LEVEL; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM TRANSISTORS; SILICIDES;

MOSFET DEVICES;

EID: 0031336472     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0241     Document Type: Article

References (2)

1. The National Technology Roadmap For Semiconductors, Semiconductor Industry Association, 1994.
2. C. H. Yang, 'Realization of a field-effect resonant tunneling transistor at room temperature: Observation of negative transconductance due to quantum tunneling', Appl. Phys. Lett. 60 1250 (1992).