Salicide process for 400 angstroms fully-depleted SOI-MOSFETs using NiSi

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 22-23

  Deng, F ^a   Johnson, R A ^a   Dubbelday, W B ^a   Garcia, G A ^a   Asbeck, P M ^a   Lau, S S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HEAT RESISTANCE; MOSFET DEVICES; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS;

N CHANNEL METAL OXIDE SEMICONDUCTORS (NMOS); P CHANNEL METAL OXIDE SEMICONDUCTORS (PMOS); SALICIDE PROCESS; SEPARATION BY IMPLANTATION BY OXYGEN (SIMOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031335841     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)