Low-field Time Dependent Dielectric Breakdown characterization of very large area gate oxide

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 1997, Pages 162-166

  Bahrami, Mahmoud ^a   Fishbein, Bruce ^a   Lindo, Patrick ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; FAILURE ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS;

GATE OXIDES; THERMAL ACTIVATION ENERGY; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

GATES (TRANSISTOR);

EID: 0031335492     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)