On the compensation mechanism of amorphous silicon films: study of stability

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 91-96

  Caputo, D ^a   De Cesare, G ^a   Palma, F ^a   Tucci, M ^a   Minarini, C ^a   Terzini, E ^a  

^a Dep of Electronic Engineering   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; FILM PREPARATION; HYDROGENATION; PHASE COMPOSITION; PHOTOCHEMICAL REACTIONS; PHOTOCONDUCTIVITY;

DEFECT DENSITY; GAS DOPANT CONCENTRATION; LIGHT SOAKING; PHOTOCURRENT;

AMORPHOUS SILICON;

EID: 0031335278     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-91     Document Type: Conference Paper

References (12)