Optical characterization of MBE-grown GaNAs

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 153-156

  Pozina, G ^a   Ivanov, I ^a   Monemar, B ^a   Thordson, J ^b   Andersson, T G ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

GaNAs; MBE growth; Optical characterization

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; MOLECULAR BEAM EPITAXY; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

BOWING PARAMETERS; GALLIUM NITROGEN ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031334468     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00154-2     Document Type: Article

References (14)

1. M. Weyers, M. Sato, H. Ando, Jpn. J. Appl. Phys. 31 (1992) L853.
2. M. Weyers, M. Sato, Appl. Phys. Lett. 62 (1993) 1396.
3. M. Kondow, K. Uomi, K. Hosomi, T. Mozume, Jpn. J. Appl. Phys. 33 (1994) L1056.
4. M. Sato, J. Cryst. Growth 145 (1994) 99.
5. M. Kondow, K. Uomi, T. Kitatani, S. Watahiki, Y. Yazawa, J. Cryst. Growth 164 (1996) 175.
6. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, K. Hosomi, T. Mozume, Solid-State Electron. 41 (1997) 209.
7. C.T. Foxon, T.S. Cheng, S.V. Novikov, D.E. Lacklison, L.S. Jenkins, D. Johnston, J.W. Orton, S.E. Hooper, N. Baba-Ali, T.L. Tansley, V.V. Tret'yakov, J. Cryst. Growth 150 (1995) 892.
8. Y. Xin, P.D. Brown, R.E. Dunin-Borkowski, C.J. Humphreys, T.S. Cheng, C.T. Foxon, J. Cryst. Growth 171 (1997) 321.
9. W.G. Bi, C.W. Tu, Appl. Phys. Lett. 70 (1997) 1608.
10. S. Sakai, Y. Ueta, Y. Teauchi, Jpn. J. Appl. Phys. 1 (32) (1993) 4413.
11. J. Neugebauer, C.G. Van de Walle, Phys. Rev. B 51 (1995) 10568.
12. L. Bellaiche, S.H. Wei, A. Zunger, Phys. Rev. B 54 (1996) 17568.
13. S.-H. Wei, A. Zunger, Phys. Rev. Lett. 76 (1996) 664.
14. M.J. Howes, D.V. Morgan (Eds.), Gallium Arsenide, Wiley, New York, 1986.