III-V compound semiconductor MOSFETs using Ga2O3(Gd2O3) as gate dielectric

IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings

Volumn , Issue , 1997, Pages 18-21

  Ren, F ^a   Hong, M ^a   Kuo, J M ^a   Hobson, W S ^a   Lothian, J R ^a   Tsai, H S ^a   Lin, J ^a   Mannaerts, J P ^a   Kwo, J ^a   Chu, S N G ^a   Chen, Y K ^a   Cho, A Y ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM COMPOUNDS;

GATE INSULATORS;

MOSFET DEVICES;

EID: 0031334245     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)