Filamentation in high-power tapered semiconductor amplifiers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 63-73

  Bossert, David J ^a   Dente, Gregory C ^b   Tilton, Michael L ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b GCD Associates   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Filamentation; Semiconductor amplifiers

Indexed keywords

CIVIL AVIATION; ELECTRIC CONDUCTIVITY; FILAMENTS (LAMP); HETEROJUNCTIONS; LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; WAVE EQUATIONS; BAND STRUCTURE; CHARGE CARRIERS; DESIGN; LIGHT AMPLIFIERS; PERTURBATION TECHNIQUES;

BAND GAPS; CARRIER INJECTIONS; DESIGN ISSUES; EXPERIMENTAL MEASUREMENTS; FAR FIELDS; FILAMENT FORMATION; FILAMENTATION; HIGH POWERS; PARAXIAL WAVE EQUATION (PWE); SEMICONDUCTOR AMPLIFIERS; BANDGAPS; TAPERED AMPLIFIERS; WAVE EQUATIONS;

SEMICONDUCTOR LASERS;

EID: 0031333636     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273817     Document Type: Conference Paper

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