Interaction of Ir and IrO2 thin films with polysilicon, W and WSIx

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 479-488

  Kuah, Shaohong ^a   Balu, Venkatasubramani ^a   Chen, Tung Sheng ^a   Jiang, B O ^a   Hadad, Daniel ^a   White, Bruce ^b   Jones, Robert E ^b   Zurcher, Peter ^b   Melnick, Bradley ^b   Gillespie, Sherry ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b Mat Res and Strategic Technologies   (United States)

Author keywords

Contact; Electrode; Iridium; Iridium oxide; Plug; Polysilicon; Tungsten; Tungsten suicide

Indexed keywords

ADHESION; ANNEALING; COMPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRODES; FERROELECTRIC DEVICES; IRIDIUM; IRIDIUM COMPOUNDS; SILICON COMPOUNDS; THIN FILMS; TUNGSTEN;

IRIDIUM OXIDE; POLYSILICON; TUNGSTEN SILICIDE;

DIELECTRIC FILMS;

EID: 0031333566     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013022     Document Type: Article

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