Mathematical modelling of thermal effects in semiconductor laser operation

IEE Proceedings: Optoelectronics

Volumn 144, Issue 6, 1997, Pages 389-396

  Smith, W R ^a   King, J R ^a   Tuck, B ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Semiconductor lasers; Thermal effects

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; NUMERICAL METHODS; THERMAL EFFECTS;

OPTICAL EFFECTS;

SEMICONDUCTOR LASERS;

EID: 0031333524     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971389     Document Type: Article

References (14)

1. TAN, G., BEWTRA, N., LEE, K., and XU, J.M.: 'A two-dimensional nonisothermal finite element simulation of laser diodes', IEEE J. Quantum Electron., 1993, 29, pp. 822-835
2. GAULT, M., MAWBY, P., ADAMS, A.R., and TOWERS, M.: 'Two-dimensional simulation of constricted-mesa InGaAsP/InP buried-heterostructure lasers', IEEE J. Quantum Electron., 1994, 30, pp. 1691-1700
3. LEE, H.H.: 'Effects of lateral heat and carrier diffusion on thermal runaway of cw DH semiconductor lasers', IEEE J. Quantum Electron., 1993, 29, pp. 2619-2624
4. HADLEY, G.R., LEAR, K.L., WARREN, M.E., CHOQUETTE, K.D., SCOTT, J.W., and CORZINE, S.W.: 'Comprehensive numerical modeling of vertical-cavity surface-emitting lasers', IEEE J. Quantum Electron., 1996, 32, pp. 607-616
5. NING, C.Z., INDIK, R.A., and MOLONEY, J.V.: 'Self-consistent approach to thermal effects in vertical-cavity surface-emitting lasers.', J. Opt. Soc. Am. B, 1995, 12, pp. 1993-2004
6. NING, C.Z., and MOLONEY, J.V.: 'Thermal effects on the threshold of vertical-cavity surface-emitting lasers: first- and second-phase transitions', Opt. Lett., 1995, 20, pp. 1151-1153
7. AGRAWAL, G.P., and DUTTA, N.K.: 'Semiconductor lasers' (Van Nostrand Reinhold, New York, 1993)
8. HUANG, J., and CASPERSON, L.W.: 'Gain and saturation in semiconductor lasers', Opt. Quantum Electron., 1993, 25, pp. 369-390
9. AIT-SADI, R., LOWERY, A.J., and TUCK, B.: 'Two-dimensional temperature modelling of DH laser diodes using the transition-line modelling (TLM) method', IEE Proc.-Sci. Meas. Technol., 1994, 141, pp. 7-14
10. NAKWASKI, W.: 'Dynamical thermal properties of stripe-geometry laser diodes', IEE Proc. I, 1984, 131, pp. 94-102
11. INSPEC: 'Properties of gallium arsenide'. The Institution of Electrical Engineers, London and New York, 1990
12. SMITH, W.R., HOWISON, S.D., and MAYERS, D.F.: 'Numerical and asymptotic solution of a sixth-order nonlinear diffusion equation and related coupled systems', IMA J. Appl. Math., 1996, 57, pp. 79-98
13. KOBAYASHI, T., and FURUKAWA, Y.: 'Temperature distributions in the GaAs-AlGaAs double-heterostructure laser below and above the threshold current', Jpn. J. Appl. Phys., 1975, 14, pp. 1981-1986
14. KOBAYASHI, T., and IWANE, G.: 'Three-dimensional thermal problems of double-heterostructure semiconductor lasers', Jpn. J. Appl. Phys., 1977, 16, pp. 1403-1408