Crystallization and fractal formation in annealed Al/a-Ge bilayer films

Chinese Physics Letters

Volumn 14, Issue 10, 1997, Pages 756-759

  Wu, Feng ^a   Zhang, Shu Yuan ^a   Chen, Zhi Wen ^a   Tan, Shun ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FRACTALS; MAGNETIC FILMS;

ANNEALING TEMPERATURES; ANNEALING TIME; BI-LAYER FILMS; FRACTAL PATTERNS; THICKNESS RATIO;

ANNEALING;

EID: 0031324306     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/10/010     Document Type: Article

References (4)

1. Bo Bian, Tadakatsu Ohkubo and Yoshiko Hirotsu, Electron Micros. 44 (1995) 182.
2. Akira Sugawara, Takashi Kikukawa and Osamu Nittono, Materials Science and Engineering, A 179-180 (1994) 355.
3. J. Q. Hou and Z. Q. Wu, Phys. Rev. B 40 (1989) 1008.
4. ZHÁNG Ren-ji, CHU Sheng-lin and WU Zi-qin, Chin. Phys. Lett. 2 (1985) 221.