p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates

Brazilian Journal of Physics

Volumn 27, Issue 4, 1997, Pages 125-129

  Quivy, A A ^a   Frizzarini, M ^a   Da Silva, E C F ^a   Sperandio, A L ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031318268     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. W.Q. Li, P.K. Bhattacharya, S.H. Kwok and R. Merlin, J. Appl. Phys. 72 (7), 3129 (1992).
2. T. Hayakawa, M. Kondo, T. Suyama, K. Takahashi, S. Yamamoto and T. Hijikata, Jap. J. Appl. Phys. 26, L302 (1987).
3. W.I. Wang, E.E. Mendez, T.S. Kuan and L. Esaki, Appl. Phys. Lett. 47 (8), 826 (1985).
4. Y.G. Chai and R. Chow, Appl. Phys. Lett. 39, 800 (1981).
5. K. Agawa, K. Hirakawa, N. Sakamoto, Y. Hashimoto and T. Ikoma, Appl. Phys. Lett. 65 (9), 1171 (1994).
6. T. Murotani, T. Shimanoe and S. Mitsui, J. Cryst. Growth 45, 302 (1978).
7. N. Sakamoto, K. Hirakawa and T. Ikoma, Appl. Phys. Lett. 67 (10), 1444 (1995).
8. D.J. Ashen, P.J. Dean, D.T.J. Hurle, J.B. Mullin, A.M. White and P.D. Greene, J. Phys. Chem. Solids 36, 1041 (1975).
9. E.E. Mendez, M. Heiblum, R. Fisher, J. Klem, R.E. Thorne and H. Morkoç , J. Appl. Phys. 54, 4202 (1983).
10. H. Künzel and K. Ploog, Appl. Phys. Lett. 37, 416 (1980).
11. Jiang De-Sheng, Y. Makita, K. Ploog, and H.J. Queisser, J. Appl. Phys. 53, 999 (1982).
12. T. Lideikis and G. Treideris, Semicond. Sci. Technol. 4, 938 (1989).
13. E. Hal Bogardus and H. Barry Bebb, Phys. Rev. 176, 993 (1968).
14. J. Nagle, R.J. Malik and D. Gershoni, Journal of Crystal Growth 111, 264 (1991).
15. A. Levine, E.C.F. da Silva, L.M.R. Scolfaro, D. Beliaev, A.A. Quivy, R. Enderlein and J.R. Leite (accepted for publication in Supperlattices and Microstructures).
16. D. Richards, J. Wagner, H. Schneider, G. Hendorfer, M. Maier, A. Fischer and K. Ploog, Phys. Rev. B 47, 9629 (1993).