High resistivity silicon layers obtained by hydrogen ion implantation

Brazilian Journal of Physics

Volumn 27, Issue 4, 1997, Pages 237-239

  Maldonado Peres, Henrique Estanislau ^a   Ramirez Fernandez, Francisco Javier ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031314580     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. Y. V. Bulgakov and T. I. Kolomenskaya, Sov. Phys. Semicond. 1, (1967).
3. J. I. Pankove and N. M. Johnson, Semiconductors and semimetals 34, (1991).
4. N. M. Johnson, C. Herring and D. J. Chadi, Physics Review Letters 56, 769 (1986).
5. J. M. Li, Applied Physics Letters. 55, 2223 (1989).