Tunneling current noise and reliability of thin MOS oxides

Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations

Volumn , Issue , 1997, Pages 247-252

  Alers, G B ^a   Weir, B E ^a   Krisch, K S ^a   Monroe, D ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPURIOUS SIGNAL NOISE;

TUNNELING CURRENT;

MOS DEVICES;

EID: 0031295723     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)