Mapping of AlxGa1-xAs band edges by ballistic electron emission spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 2063-2068

  Cheng, X C ^a   Collins, D A ^a,b   McGill, T C ^a  

^a California Institute of Technology   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRONS; EMISSION SPECTROSCOPY; FERMI LEVEL; INTERFACES (MATERIALS); METALLIZING; MOLECULAR BEAM EPITAXY; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; BALLISTIC ELECTRON EMISSION SPECTROSCOPY; EPILAYERS; FERMI LEVEL PINNING; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031286095     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580609     Document Type: Article

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