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Volumn 36, Issue 11, 1997, Pages 6607-6613

The Γc-Γv transition energies of AlxIn1-xP alloys

Author keywords

20 K; AlxIn1 xP; Disordered alloy; Electron heavy hole transition energy; Electron light hole transition energy; Hydrostatic and shear deformation potentials; Photoreflectance; Strained alloy; Unstrained alloy; X ray diffraction

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON TRANSITIONS; LIGHT REFLECTION; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SHEAR DEFORMATION; STRESS ANALYSIS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

EID: 0031277384     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6607     Document Type: Article
Times cited : (9)

References (25)
  • 13
    • 0004278141 scopus 로고
    • Electronic Properties Information Center, New York, III-V Semiconducting Compounds
    • M. Neuberger: Handbook of Electronic Materials (Electronic Properties Information Center, New York, 1971) Vol. 2, III-V Semiconducting Compounds.
    • (1971) Handbook of Electronic Materials , vol.2
    • Neuberger, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.