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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6718-6721

Positive charge generation at a SiO2/Si interface due to bombardment with metastable atoms

(5) Ono, Tetsuo a Itabashi, Naoshi a Ochiai, Isao a Yamamoto, Seiji a Mochji, Kozou a

a HITACHI LTD (Japan)

Author keywords

Damage; Metastable atom; Plasma; Si SiO2

Indexed keywords

ELECTRIC CHARGE; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; ULSI CIRCUITS;

ATOM BOMBARDMENT;

SEMICONDUCTOR JUNCTIONS;

EID: 0031276856 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.6718 Document Type: Article

Times cited : (8)

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