CuAlSe2 thin films obtained by chalcogenization

Journal de Physique III

Volumn 7, Issue 11, 1997, Pages 2165-2169

  Marsillac, S ^a   Benchouk, K ^b   El Moctar, C ^b   Bernede J C ^b   Pouzet, J ^b   Khellil, A ^a   Jamali, M ^a  

^a FSTN   (France)

^b UNIVERSITY OF ORAN   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DEPOSITION; DIFFUSION IN SOLIDS; ETCHING; EVAPORATION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); THIN FILMS; VACUUM APPLICATIONS;

CHALCOGENIZATION;

SEMICONDUCTING FILMS;

EID: 0031276627     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997249     Document Type: Article

References (5)

1. 2, Jpn J. Appl. Phys. 32 (1993) L 167.
2. 2 thin films, Thin Solid Films 268 (1995) 130.
3. 2 thin films surface stoeichiometry and phase segregation source, J. Vac. Sci. Technol. A12 (1994) 56.
4. Wagner C.D., Riggs W.M., Davis M.E., Moulder S.F. and Muilenberg G.E., Hand-Book of X-ray photoelectron spectroscopy CD, (Perkin elmer / Eden prairie (M.N.), 1979).
5. Heske C., Fink R., Jacob D. and Umbach E., Electronic structure, composition, and local surface photovoltage effects of polycristalline Cu(In Ga)Se2 thin films after Na deposition, Proceeding of the 13th European Photovoltaic Solar Energy Conference, Nice, France. (Ed. H.S. Stephens and Associates, Bedford, U.K. 23-27 October 1995) p. 2003.