Transient photoconductive gain in a-Si : H devices and its applications in radiation detection

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 399, Issue 2-3, 1997, Pages 324-334

  Lee, H K ^a   Suh, T S ^a   Choe, B Y ^a   Shinn, K S ^a   Cho, G ^b   Perez Mendez, V ^c  

^a The Catholic University of Korea College of Medicine   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A Si : H; n i n photoconductor; p i n photodiode; Photoconductive gain; Photoconductivity; Photocurrent

Indexed keywords

AMORPHOUS SILICON; CHARGED PARTICLES; CURRENT DENSITY; GAIN MEASUREMENT; GAMMA RAYS; PHOTOCONDUCTIVITY; PHOTODIODES; SILICON SENSORS; X RAY RADIOGRAPHY;

DARK CURRENT DENSITY; PHOTOCONDUCTIVE GAIN; PHOTOCURRENT;

PARTICLE DETECTORS;

EID: 0031275938     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00924-8     Document Type: Article

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