Recombination and photo sensitivity centres in ion irradiated nitride of boron

Fizika i Khimiya Obrabotki Materialov

Volumn , Issue 6, 1997, Pages 21-26

  Kabyshev, A V ^a   Konusov, F V ^a   Lopatin, V V ^a  

^a NATIONAL RESEARCH TOMSK POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CHARGE TRANSFER; DEFECTS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ION IMPLANTATION; NITRIDES; PHOTOELECTRICITY; RADIATION EFFECTS; SURFACE TREATMENT;

IRRADIATED BORON NITRIDE;

CUBIC BORON NITRIDE;

EID: 0031275784     PISSN: 00153214     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)