Ultrathin GaAs layers embedded in AlAs: The observation of intense short-wavelength emission

Physica Status Solidi (A) Applied Research

Volumn 164, Issue 1, 1997, Pages 165-168

  Schwabe, R ^a   Gottschalch, V ^a   Pietag, F ^a   Unger, K ^b   Di Ventra, M ^c   Bitz, A ^c   Staehli, J L ^c  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b PH Ecublens ^*  (Germany)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GREEN'S FUNCTION; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

PHOTOEXCITED CARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031275736     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199711)164:1<165::AID-PSSA165>3.0.CO;2-T     Document Type: Article

References (8)

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