First-principles simulations of a-Si:H surfaces

Modelling and Simulation in Materials Science and Engineering

Volumn 5, Issue 6, 1997, Pages 549-562

  Kilian, Karland A ^a   Adams, James B ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; HYDROGEN; HYDROGENATION; MATHEMATICAL MODELS; PASSIVATION; SURFACES;

ATOMISTIC MODEL; HYDROGENATED AMORPHOUS SILICON;

COMPUTER SIMULATION;

EID: 0031275142     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/5/6/002     Document Type: Article

References (22)

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