Mid-infrared electroluminescence in GaAs/AlGaAs structures

Applied Physics Letters

Volumn 71, Issue 20, 1997, Pages 2892-2894

  Strasser, G ^a   Kruck, P ^a,b   Helm, M ^a,b   Heyman, J N ^a,c   Hvozdara, L ^a   Gornik, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c MACALESTER COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; LIGHT ABSORPTION; LIGHT TRANSMISSION; OPTICAL VARIABLES MEASUREMENT; OPTIMIZATION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

INFRARED ABSORPTION; MIDINFRARED ELECTROLUMINESCENCE; OPTICAL PHONON ENERGY; PHOTOCURRENT;

LIGHT EMITTING DIODES;

EID: 0031274291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119329     Document Type: Article

References (5)

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3. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 64, 1144 (1994).
4. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y Cho, Science 264, 553 (1994).
5. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, J. N. Baillargeon, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 68, 3680 (1996)