Growth of ZnSe/ZnS strained-layer superlattice on Si substrates by atomic layer epitaxy

Materials Chemistry and Physics

Volumn 51, Issue 2, 1997, Pages 102-106

  Hsu, Chin Tsar ^a   Yokoyama, M ^b   Su, Y K ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Atomic layer epitaxy; ZnS ZnSe strained layer superlattices

Indexed keywords

ACTIVATION ENERGY; ELECTRON EMISSION; EPITAXIAL GROWTH; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ATOMIC LAYER EPITAXY; ZINC SELENIDE; ZINC SULFIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031274009     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80276-3     Document Type: Article

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