Epitaxial CoSi2 formation by Co/Hf bilayers on Si(100)

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 483-490

  Gebhardt, B ^a   Falke, M ^a   Giesler, H ^a   Teichert, S ^a   Beddies, G ^a   Hinneberg, H J ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; HALL EFFECT; MULTILAYERS; SEMICONDUCTING SILICON;

TITANIUM INTERLAYER MEDIATED EPITAXY (TIME);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031273815     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00150-0     Document Type: Article

References (10)

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