Raman scattering by surface polaritons in cubic GaN epitaxial layers

Solid State Communications

Volumn 104, Issue 7, 1997, Pages 397-400

  Davydov, V Yu ^a   Subashiev, A V ^b   Cheng, T S ^c   Foxon, C T ^c   Goncharuk, I N ^a   Smirnov, A N ^a   Zolotareva, R V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

A. thin films; D. optical properties; D. phonons; E. inelastic light scattering

Indexed keywords

BACKSCATTERING; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; LIGHT SCATTERING; PHONONS; RAMAN SCATTERING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; TRANSPARENCY;

SEMICONDUCTING GALLIUM NITRIDE; SURFACE POLARITON MODE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031273476     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00346-3     Document Type: Article

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