Single-crystalline silicon solar cell with pp+ heterojunction of c-Si substrate and μc-Si : H film

Solar Energy Materials and Solar Cells

Volumn 48, Issue 1-4, 1997, Pages 131-136

  Nishida, M ^a   Shindo, T ^a   Komatsu, Y ^a   Okamoto, S ^a   Kaneiwa, M ^a   Nanmori, T ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

C si substrate; H film; Heterojunction; pp+; Single crystalline silicon; C si

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SINGLE CRYSTALS; THERMAL EFFECTS;

CONVERSION EFFICIENCY; HYDROGENATED MICROCRYSTALLINE SILICON; RADIOFREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SILICON SOLAR CELLS;

EID: 0031272366     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00082-2     Document Type: Article

References (4)

1. J. Zhao, A. Wang, P. Altermatt, S.R. Wenham, M.A. Green, 24% efficient silicon solar cells, Proc. 1st IEEE WCPEC, Hawaii, 1994, pp. 1477-1480.
2. S. Sterk, S.W. Glunz, J. Knobloch, W. Wettling, High efficiency (> 22%) Si-solar cells with optimized emitter, Proc. 1st IEEE WCPEC, Hawaii, 1994, pp. 1303-1306.
3. M. Kaneiwa, S. Okamoto, I. Yamasaki, M. Nishida, T. Nanmori, Cell structure with low-high heterojunction of c-Si and μc-Si: H under rear contact for improvement of efficiencies, Sol. Energy Mater. Sol Cells 34 (1994) 183.
4. S. Okamoto, M. Nishida, I. Yamasaki, Y. Komatsu, M. Kaneiwa, T. Nanmori, Low-high heterojunction of c-Si substrate and μc-Si : H film under rear contact for improvement of efficiency, Proc. 1st IEEE WCPEC, Hawaii, 1994, pp. 1295-1298.