Transport study on pressure-induced band overlapped metallization of layered semiconductor black phosphorus

Solid State Communications

Volumn 104, Issue 6, 1997, Pages 307-310

  Akahama, Y ^a   Endo, S ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HALL EFFECT; METALLIZING; PHOSPHORUS; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

SEMICONDUCTOR BLACK PHOSPHORUS;

SEMICONDUCTOR MATERIALS;

EID: 0031272280     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00326-8     Document Type: Article

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