A planar amorphous Si1-xGex separated-absorption-multiplication avalanche photo diode

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 568-570

  Torres J , A ^a   Gutierrez D E A ^a  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CMOS INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SEPARATED ABSORPTION MULTIPLICATION (SAM);

PHOTODIODES;

EID: 0031271408     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641448     Document Type: Article

References (7)

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7. N. Susa, H. Nakagome, O. Mikami, H. Ando, and H. Kanbe, "New In-GaAs/InP avalanche photodiode structure for the 1-1.6 μm wavelength region," IEEE J. Quantum Electron., vol. QE-16, pp. 864-869, Aug. 1980.