Integration evaluation of low permittivity silicon based spin on materials as IMD

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 277-284

  Pires, F ^a   Noel P ^b   Lecornec, Ch ^b   Passemard, G ^a   Louis, D ^b   Lajoinie, E ^a  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; PERMITTIVITY; SEMICONDUCTING SILICON;

INTERMETAL DIELECTRICS; RESIST STRIPPING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031270480     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00123-8     Document Type: Article

References (4)

1. S. Bothra, Solid State Technol. (Feb 1997) 77.
2. J. Waterloos, DUMIC Conference, 1997, p. 310.
3. J.N. Bremer, DUMIC Conference, 1997, p. 310.
4. F. Takeshi, Ext. Abs. Solid State Dev. Mater., 1996, pp. 145-147.