SCOPUS 정보 검색 플랫폼

Volumn 181, Issue 3, 1997, Pages 301-303

Segregation reduction in vertical Bridgman crystal growth of CdZnTe

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; ENCAPSULATION; EVAPORATION; PRESSURIZATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR GROWTH; ZINC;

BRIDGMAN CRYSTAL GROWTH;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031270039 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00323-0 Document Type: Letter

Times cited : (16)

References (8)

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2
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- US Patent 5,650,008, 1997
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- Kou, S.¹ Tao, Y.²

3
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- Wiley, New York
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4
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- Wiley, New York
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- (1996) Transport Phenomena and Materials Processing
- Kou, S.¹

5
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- Tanaka, A.¹ Masa, Y.² Seto, S.³ Kawsaki, T.⁴

6
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- M. Muhlberg, P. Rudolph, C. Genzel, B. Wermke, U. Becker, J. Crystal Growth 101 (1990) 275.
- (1990) J. Crystal Growth , vol.101 , pp. 275
- Muhlberg, M.¹ Rudolph, P.² Genzel, C.³ Wermke, B.⁴ Becker, U.⁵

7
- 0025412822
- P. Cheuvart, U. El-Hanani, D. Schneider, R. Triboulet, J. Crystal Growth 101 (1990) 270.
- (1990) J. Crystal Growth , vol.101 , pp. 270
- Cheuvart, P.¹ El-Hanani, U.² Schneider, D.³ Triboulet, R.⁴

8
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- Nakanishi, F.¹ Tatsumi, M.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.